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Samsung 9100 PRO, PCIe 5.0, NVMe M.2 SSD – Storage

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Product overview

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Samsung NVMe SSD powered by V-NAND technology Up to 14,800 MB/s sequential read and 13,400 MB/s write speed Upto 2,200K IOPS random read and 2,600K IOPS random write speed. Samsung 9100 PRO, PCIe 5.0, NVMe M.2 SSD is listed as Tech > Storage in New condition. Catalogue information includes manufacturer part number MZ-VAP2T0BW. Verified details include cache memory of Samsung 2GB Low Power DDR4X SDRAM, storage memory of Samsung V-NAND TLC, capacity of 2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise), average power consumption (system level) of Average: Read 8.1 W / Write 7.9 W* Actual power consumption may vary depending on system hardware & configuration, power consumption (device sleep) of Typical 4 mW * Actual power consumption may vary depending on system hardware & configuration and power consumption (idle) of Typical 4.8 mW * Actual power consumption may vary depending on system hardware & configuration.

Key features

  • Samsung NVMe SSD powered by V-NAND technology Up to 14,800 MB/s sequential read and 13,400 MB/s write speed Upto 2,200K IOPS random read and 2,600K
  • Cache Memory: Samsung 2GB Low Power DDR4X SDRAM
  • Storage Memory: Samsung V-NAND TLC
  • Capacity: 2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications
  • Average Power Consumption (system level): Average: Read 8.1 W / Write 7.9 W* Actual power consumption may vary depending on system hardware &
  • Power Consumption (Device Sleep): Typical 4 mW * Actual power consumption may vary depending on system hardware & configuration
  • Power consumption (Idle): Typical 4.8 mW * Actual power consumption may vary depending on system hardware & configuration
  • 1 listed configuration across 1 colour

Specifications

Full product details

Only verified supplier or manufacturer facts are shown. Variant-specific values remain tied to the option selected above.

Performance

Cache Memory
Samsung 2GB Low Power DDR4X SDRAM
Storage Memory
Samsung V-NAND TLC

Storage

Capacity
2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Battery and power

Average Power Consumption (system level)
Average: Read 8.1 W / Write 7.9 W* Actual power consumption may vary depending on system hardware & configuration
Power Consumption (Device Sleep)
Typical 4 mW * Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle)
Typical 4.8 mW * Actual power consumption may vary depending on system hardware & configuration

Connectivity

Device Sleep Mode Support
Yes

Design

Weight
Max 9.0g Weight

Dimensions

Dimension (WxHxD)
Max 80.15 x Max 22.15 x Max 2.38 mm

Product details

Allowable Voltage
3.3 V ± 5 % Allowable voltage
Warranty
5-year Limited Warranty or 1,200TBW Limited Warranty

Product information

Brand
Samsung
Condition
New
Department
Tech
Product type
Storage

Identifiers

Model number
MZ-VAP2T0BW

Listing identifiers

For Him reference
FH-P-CC100A1FB576
Manufacturer part number
MZ-VAP2T0BW

Your buying guide

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01

Fit & sizing

This item is not sold by a conventional clothing size. Select a colour or configuration above where available.

02

Care

Follow the brand care label or product documentation. For leather, jewellery and watches, avoid prolonged moisture, heat and chemical contact.

03

Delivery & returns

Complimentary UK delivery is available over £50. Eligible items can be returned within 30 days in their original, unworn condition.

04

Availability

In stock in at least one listed variation. Final availability is confirmed before payment.

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